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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D082
BR101 Silicon controlled switch
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24
Philips Semiconductors
Product specification
Silicon controlled switch
DESCRIPTION Silicon planar PNPN switch in a TO-72 metal package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. APPLICATIONS * Time base circuits * Switching in television circuits * Trigger device for thyristors.
handbook, halfpage
BR101
PINNING PIN 1 2 3 4 cathode cathode gate anode gate (connected to case) anode DESCRIPTION
a ag
1
ok, halfpage
2
kg
MSB028
4
3
k
MGL168
Fig.1 Simplified outline (TO-72) and symbol.
QUICK REFERENCE DATA SYMBOL PNP transistor VEBO VCBO IERM Ptot Tj VAK IH emitter-base voltage open collector -50 V PARAMETER CONDITIONS MAX. UNIT
NPN transistor collector-base voltage repetitive peak emitter current total power dissipation junction temperature forward on-state voltage holding current IA = 50 mA; IAG = 0; RKG-K = 10 k IAG = 10 mA; VBB = -2 V; RKG-K = 10 k Tamb 25 C open emitter 50 -2.5 275 150 1.4 1 V A mW C V mA
1997 Jul 24
2
Philips Semiconductors
Product specification
Silicon controlled switch
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL NPN transistor VCBO VCER VEBO IC ICM IE IERM VCBO VCEO VEBO IE IERM Ptot Tstg Tj Tamb Notes collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current emitter current (DC) repetitive peak emitter current tp = 10 s; = 0.01 open emitter open base open collector tp = 10 s; = 0.01 Tamb 25 C open emitter RBE = 10 k open collector; note 1 note 2 - - - - - - - - - - - - - -65 - -65 50 50 5 175 175 -175 -2.5 -50 -50 -50 175 2.5 PARAMETER CONDITIONS MIN. MAX.
BR101
UNIT
V V V mA mA mA A
PNP transistor collector-base voltage collector-emitter voltage emitter-base voltage emitter current (DC) repetitive peak emitter current V V V mA A
Combined device total power dissipation storage temperature junction temperature operating ambient temperature 275 +150 150 +150 mW C C C
1. It is permitted to exceed this voltage during the discharge of a capacitor of max. 390 pF, provided the charge does not exceed 50 nC. 2. Provided the IE rating is not exceeded. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 0.45 UNIT K/mW
thermal resistance from junction to ambient in free air
1997 Jul 24
3
Philips Semiconductors
Product specification
Silicon controlled switch
BR101
a (anode) (e2 ) e2
handbook, halfpage
PNP transistor
ag (anode gate) (c 1,b 2) b 1,c 2
P N P
kg (cathode gate) (b1 ,c 2)
NPN transistor e1 k (cathode) (e1 )
MBB680
N P N
MBB681
c 1,b 2
Fig.2 Two transistor equivalent circuit.
Fig.3 PNPN silicon controlled switch structure.
handbook, halfpage
a IA IKG IAG ag VAK -IK k
MBB682
handbook, halfpage
IA a RKG-K VBB kg k IAG ag DUT
kg
MBB683
Fig.4 Silicon controlled switch symbol.
Fig.5 Equivalent test circuit for holding current.
1997 Jul 24
4
Philips Semiconductors
Product specification
Silicon controlled switch
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL NPN transistor ICER IEBO VCEsat VBEsat hFE fT Cc Ce ICEO IEBO hFE VAK collector cut-off current emitter cut-off current base-emitter saturation voltage DC current gain transition frequency collector capacitance emitter capacitance VCE = 50 V; RBE = 10 k IC = 0; VEB = 5 V; Tj = 150 C IC = 10 mA; IB = 1 mA IC = 10 mA; VCE = 2 V IC = 10 mA; VCE = 2 V IE = ie = 0; VCB = 20 V; f = 1 MHz IC = ic = 0; VEB = 1 V IB = 0; VCE = -50 V; Tj = 150 C IC = 0; VEB = -50 V; Tj = 150 C IE = 1 mA; VCB = 0 V RKG-K = 10 k IA = 50 mA; IAG = 0 IA = 1 mA; IAG = 10 mA IH holding current RKG-K = 10 k; IAG = 10 mA; VBB = -2 V - - - - - - - - - - 50 - - - - - 0.25 - - - - - - 300 - - - - - PARAMETER CONDITIONS MIN. TYP.
BR101
MAX.
UNIT
500 50 50 500 900 - - 5 25 -50 -50 2.5
nA A A mV mV MHz pF pF A A
VCE = 50 V; RBE = 10 k; Tj = 150 C - collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
PNP transistor collector cut-off current emitter cut-off current DC current gain
Combined device forward on-state voltage 1.4 1.2 1 V V mA
1997 Jul 24
5
Philips Semiconductors
Product specification
Silicon controlled switch
PACKAGE OUTLINE Metal-can cylindrical single-ended package; 4 leads
BR101
SOT18/9
j B
seating plane wM AMBM
1
k
b D1
4 2 3
a A D A L
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.31 4.74 a 2.54 b 0.46 0.42 D 5.45 5.30 D1 4.70 4.55 j 1.05 0.95 k 1.0 0.9 L 14.5 13.5 w 0.36 45
OUTLINE VERSION SOT18/9
REFERENCES IEC B12/C7 type 3 JEDEC TO-72 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
1997 Jul 24
6
Philips Semiconductors
Product specification
Silicon controlled switch
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BR101
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 24
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jul 24
Document order number:
9397 750 02657

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